| PART |
Description |
Maker |
| PCF35N08 |
N Channel Enhancement Mode Power Field Effect Transister Chip
|
General Electric Solid State
|
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| 2SD2478 2SB1616 |
MEDIUM POWER TRANSISTER
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SD2478 |
MEDIUM POWER TRANSISTER
|
ROHM
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| MRF6VP3450HR5 MRF6VP3450HR6 MRF6VP3450HSR5 MRF6VP3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF6S19100N MRF6S19100NBR1 MRF6S19100NR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MTM15N45 MTM15N50 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF373A MRF373ALR1 MRF373ALSR1 |
RF Power Field Effect Transistors
|
Motorola, Inc.
|
